BDW83D | COMSET Semiconductors
Bipolar junction transistor, NPN, 15 A, 120 V, THT, TO-3PN, BDW83D
Order No.: 15S5368
EAN: 4099879028563
MPN:
BDW83D
Unit Price (€ / pc.)
5.2241 € *
Available: 185 pcs.
Leadtime: On Request **
Total Price:
5.22 € *
Price list
Quantity
Price per unit*
1 pcs.
5.2241 €
10 pcs.
3.7366 €
100 pcs.
3.2011 €
500 pcs.
2.7727 €
1000 pcs.
2.5228 €
*incl. VAT plus shipping costs
**Subject to prior sale
NPN power transistor, BDW83D, COMSET
This silicon epitaxial-base NPN power monolithic Darlington transistor is mounted in Jedec TO3PN plastic package. It is intended for use in power linear and switching applications.
Features
- Compliance to RoHS
Technical specifications
| Ausführung | NPN | |
| Gehäuse | TO-3PN | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 120 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 120 V | |
| min. Temperatur | -65 °C | |
| Montage | THT | |
| Nennstrom | 15 A | |
| Sättigungsspannung | 2.5 V | |
| Transitfrequenz fTmin | 1 MHz | |
| Verlustleistung VA (AC) | 150 W | |
| Kollektorstrom | 15 A |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 25 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
