PBSS8110T,215 | NEXPERIA
Bipolar junction transistor, NPN, 1 A, 100 V, SMD, SOT-23, PBSS8110T,215
Unit Price (€ / pc.)
0.2059 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, PBSS8110T,215, NEXPERIA
NPN low VCEsat transistor in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
Features
- Low collector-emitter saturation voltage
- High collector current capability: IC and ICM
Applications
- Telecom infrastructure
- Industrial
- Supply line switching
- Battery charger
- LCD backlighting
- Driver in low supply voltage applications
Technical specifications
| Ausführung | NPN | |
| Gehäuse | SOT-23 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 120 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 100 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Sättigungsspannung | 200 mV | |
| Transitfrequenz fTmin | 100 MHz | |
| Verlustleistung VA (AC) | 0.3 W | |
| Kollektorstrom | 1 A | |
| Max Gleichstromverstärkung | 500 mA | |
| Min Gleichstromverstärkung | 150 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 6/8/11 |
| SVHC frei | Yes |
